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LM2105DR

107-V 0.5-A/0.8-A half-bridge gate driver with 5-V UVLO and integrated bootstrap diode

Manufacturer NO:

LM2105DR

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Product SN:

10506-LM2105DR

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Package/Case:

SOIC (D)-8

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Manufacturer Lead Time:
-
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Datasheet:
Detailed Descripition:

Integrated bootstrap diode

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Product Application Field:None

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Product Description

The LM2105 is a compact, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The integrated bootstrap diode saves board space and reduces system cost by eliminating the need for an external discrete diode.

The –1-V DC and –19.5-V transient negative voltage handling on the SH pin improve the system robustness in high noise applications. The small, thermally-enhanced 8-pin WSON package improves PCB layout by allowing the driver to be placed closer to the motor phases. The LM2105 is also available in an 8-pin SOIC package compatible with industry standard pinouts. Undervoltage lockout (UVLO) is provided on both the low-side and the high-side power rails for protection during power up and power down.


  • Drives two N-channel MOSFETs in half-bridge configuration
  • Integrated bootstrap diode
  • 5-V typical undervoltage lockout on GVDD
  • 107-V absolute maximum voltage on BST
  • –19.5-V absolute maximum negative transient voltage handling on SH
  • 0.5-A/0.8-A peak source/sink currents
  • 115-ns typical propagation delay
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Product price

Qty
Unit Price
Ext Price
1000
$0.22
$220
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