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UCC21551CQDWKRQ1

Automotive, 4A/6A 5kVRMS dual-channel isolated gate driver with EN and DT pins for IGBT and SiC

Manufacturer NO:

UCC21551CQDWKRQ1

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Product SN:

10506-UCC21551CQDWKRQ1

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Package/Case:

SOIC (DWK)-14

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Manufacturer Lead Time:
-
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Detailed Descripition:

Enable, High CMTI, Programmable dead time

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Product Application Field:None

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Product Description

The UCC21551x-Q1 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, and IGBT transistors.

The UCC21551x-Q1 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). DFJ28 package offers >5.3mm CH-to-CH creepage to support high voltage systems.

Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection.

With all these advanced features, the UCC21551x-Q1 device enables high efficiency, high power density, and robustness in a wide variety of power applications.


  • Universal: dual low-side, dual high-side or half-bridge driver
  • AEC-Q100 qualified with the following result
    • Device temperature grade 1
  • Junction temperature range –40 to +150°C
  • Up to 4A peak source and 6A peak sink output
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Up to 25V VDD output drive supply
    • 5V,8V, 12V and 17V VDD UVLO options
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • UVLO protection for all power supplies
  • Fast enable for power sequencing
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Product price

Qty
Unit Price
Ext Price
1000
$1.225
$1225
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